| Part Number | 2SD1640 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High DC Current Gain- : hFE = 4000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector-Emitter Saturation Vo... |
| Features |
RICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA, IB= 0
100
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 100μA, IE= 0
120
V
VCE(s...
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| Datasheet |
 2SD1640 Datasheet 205.62KB |
