| Part Number | 2SD1245 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 2A ·Minimum Lot-to-Lot variations for ... |
| Features |
Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 60mA
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
ICEO
Collector Cutoff Current
VCE=...
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| Datasheet |
 2SD1245 Datasheet 208.64KB |
