| Part Number | 2SD1191 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.5A ·Low Saturation Voltage ·Complement to... |
| Features |
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
60
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 3mA; IE= 0
70
V
VCE(sat) Collector-Emitter Saturati...
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| Datasheet |
 2SD1191 Datasheet
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