| Part Number | 2SD1173 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 3.0A ·Built-in Damper Diode ·Wide ... |
| Features |
BOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 1.0A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Base Cutoff Cu...
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| Datasheet |
 2SD1173 Datasheet
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