| Part Number | 2SD1172 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.0V(Max.)@ IC= 2.5A ·Built-in Damper Diode ·Wide ... |
| Features |
OL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
4.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Base Cu...
|
| Datasheet |
 2SD1172 Datasheet
|
