| Part Number | 2SD1170 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min.) ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Mini... |
| Features |
wise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 3mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; ...
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| Datasheet |
 2SD1170 Datasheet
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