| Part Number | 2SC3866 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·High Breakdown Voltage : V(BR)CBO= 900V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance... |
| Features |
pecified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Satu...
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| Datasheet |
 2SC3866 Datasheet
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