| Part Number | 2SC3659 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations for robust device performance and reliable oper... |
| Features |
400V; IE= 0
0.5 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
500 mA
VECF
C-E Diode Forward Voltage
IF= 6A
2.0
V
tf
Fall Time
IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0
0.5 μs
Notice： ISC reserves the rights to make changes of the content here...
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| Datasheet |
 2SC3659 Datasheet
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