| Part Number | 2SC3658 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·High Breakdown Voltage- : VCES= 1500V (Min) ·Built-in Damper Didoe ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perfor... |
| Features |
age
IC= 5A; IB= 1.25A
1.5
V
ICBO
Collector Cutoff Current
VCE= 1200V; IE= 0
0.5 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
500 mA
VECF
C-E Diode Forward Voltage
IF= 6A
2.0
V
tf
Fall Time
IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0
0.5 μ...
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| Datasheet |
 2SC3658 Datasheet
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