| Part Number | 2SC3627 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performanc... |
| Features |
N TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
200
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
250
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
1.0
V
VBE(sat) Base-Emitter ...
|
| Datasheet |
 2SC3627 Datasheet 196.42KB |
