| Part Number | 2SC3619 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performan... |
| Features |
0mA; IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10mA; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 240V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 4mA; VCE= 10V
hFE-2
DC Current Gain
IC= 20mA; VC...
|
| Datasheet |
 2SC3619 Datasheet
|
