| Part Number | 2SC3565 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for... |
| Features |
Voltage IC= 1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA
ICEO
Collector Cutoff Current
VCE= 250V; RBE= ∞
hFE
DC Current Gain
IC= 10mA; VCE= 10V
fT
Curr...
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| Datasheet |
 2SC3565 Datasheet
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