| Part Number | 2SC3561 |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performan... |
| Features |
BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.8A; IB= 0.16A
I...
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| Datasheet |
 2SC3561 Datasheet
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