| Part Number | 2SC1971 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile rad... |
| Features |
C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1971
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 10mA, IE= 0
35
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; RBE= ∞
17
V
V(BR)EBO
Emitter-...
|
| Datasheet |
 2SC1971 Datasheet
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