| Part Number | 2SC1970 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Power Gain- : Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de... |
| Features |
NGE Semiconductor
2SC1970
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞
V(BR)EBO...
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| Datasheet |
 2SC1970 Datasheet
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