Part Number | 2SB855 |
Manufacturer | Inchange Semiconductor |
Title | Silicon PNP Power Transistor |
Description | ·Collector Current: IC= -2A ·Low Collector Saturation Voltage : VCE(sat)= -1.2V(Max)@IC= -2A ·High Collector Power Dissipation ·Minimum Lot-to-Lot... |
Features |
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
hFE-1
DC Current Gain...
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Datasheet | 2SB855 Datasheet |