| Part Number | 2SB649 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·... |
| Features |
se Breakdown Voltage
IC= -1mA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(on) Base-Emitte...
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| Datasheet |
 2SB649 Datasheet
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