| Part Number | 2SB1215 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Excellent linearity of hFE ·Small and slim package making it easy to make 2SB1215/2SD1815-used set smaller ·Low collector-to-emitter saturation v... |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -150mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -1.5A; IB= -150mA
V(BR)CBO Collector-Base Breakdown ...
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| Datasheet |
 2SB1215 Datasheet 253.99KB |
