| Part Number | 2SA1280 |
| Manufacturer | Inchange Semiconductor |
| Title | POWER TRANSISTOR |
| Description | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance an... |
| Features |
-3.0
V
VBE(ON) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC= -50mA; Vce=-4V VCB= -120V; IE= 0
-1.0
V
-1.0 μA
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-1.0 μA
hFE-1
DC Current Gain
IC= -50mA; VCE= -4V
60
200
hFE-2
DC ...
|
| Datasheet |
 2SA1280 Datasheet
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