| Part Number | 2SA1279 |
| Manufacturer | Inchange Semiconductor |
| Title | POWER TRANSISTOR |
| Description | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and... |
| Features |
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -0.15A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -1.0A; VCE= -1V
hFE-2
DC Current Gain
IC= -3.0A; VCE= -1V
...
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| Datasheet |
 2SA1279 Datasheet
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