Part Number | 2SA1107 |
Manufacturer | Inchange Semiconductor |
Title | POWER TRANSISTOR |
Description | ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robus... |
Features |
1mA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
-2.0 V
VBE(on) Base-Emitter On Voltage
IC= -5A; VCE= -5V
-2.0 V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V...
|
Datasheet | 2SA1107 Datasheet |