Part Number | 2N4387 |
Manufacturer | Inchange Semiconductor |
Title | Silicon PNP Power Transistor |
Description | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device p... |
Features |
herwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.14A
ICEO
Collector Cutoff Current
VCE= -40V; IB=0
IEBO
Emitter Cutoff ...
|
Datasheet | 2N4387 Datasheet |