Part Number | 2N3667 |
Manufacturer | Inchange Semiconductor |
Title | Silicon NPN Power Transistor |
Description | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device p... |
Features |
taining Voltage IC=10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 4V
hFE
DC Current Gain
IC= 5A; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 4V; f= 1.0MHz
...
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Datasheet | 2N3667 Datasheet |