| Part Number | 3DD200 |
| Manufacturer | Inchange |
| Title | Silicon Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 30~120(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- :... |
| Features |
ACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC...
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| Datasheet |
 3DD200 Datasheet
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