| Part Number | IXFN30N110P |
| Manufacturer | IXYS Corporation |
| Title | Polar Power MOSFET HiPerFET |
| Description | PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt ... |
| Features |
• International standard package • Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 2... |
| Datasheet |
 IXFN30N110P Datasheet
|
