| Part Number | TTD1409B |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 400V(Min) ·High DC Current Gain— : hFE = 600(Min) @ IC= 2A ·100% avalanche tested ·Minimum Lot-... |
| Features |
ERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
400
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 3mA; IC= 0
5
V
VCE(sat) Collector-Emitt...
|
| Datasheet |
 TTD1409B Datasheet 197.82KB |
