Part Number | STB15NM60ND |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | ·Drain Current: ID=14A@ TC=25℃ ·Drain Source Voltage: : VDSS= 600V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe... |
Features |
tage
VDS= VGS; ID=0.25mA
3
5
V
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 7A
0.299 mΩ
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=600V; VGS= 0 VDS=600V; VGS= 0;TC= 125℃
1...
|
Datasheet | STB15NM60ND Datasheet |