logo

MJE3055T

INCHANGE
Part Number MJE3055T
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955T ·Minimum Lot-...
Features rwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on)...

Datasheet PDF File MJE3055T Datasheet

MJE3055T   MJE3055T   MJE3055T  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map