| Part Number | KSB601 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturatio... |
| Features |
~150 ℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
KSB601
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter...
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| Datasheet |
 KSB601 Datasheet 197.40KB |
