Part Number | IRFBE30 |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | iscN-Channel MOSFET Transistor IRFBE30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10... |
Features |
·Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage R... |
Datasheet | IRFBE30 Datasheet |