| Part Number | D357 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SB527 APPLICATIONS ·Designed for AF high ... |
| Features |
er-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.3A; IB= 30mA
VBE(on) Base-Emitter On Voltage
IC= 50mA; VCE= 4V
ICBO Collector Cutoff Current
VCB= 25V; IE= 0
ICEO Collector Cutoff Current
VCE= 100V;...
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| Datasheet |
 D357 Datasheet
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