| Part Number | BU536 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for rob... |
| Features |
LECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB=0
480
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat...
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| Datasheet |
 BU536 Datasheet
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