| Part Number | BU526 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for rob... |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB=0
V(BR)CER Collector-Emitter Breakdown Voltage IC= 0.5mA; RBE≤ 100Ω
V(BR)EBO Emitter-Base Breakdown Voltage
...
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| Datasheet |
 BU526 Datasheet
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