| Part Number | BDY93 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and... |
| Features |
rwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-EmitterBreakdownVoltage IC= 50mA ; IB= 0
350
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
1.5
V
VCE(sat)-2 Collector-Emitter Saturatio...
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| Datasheet |
 BDY93 Datasheet
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