| Part Number | BDT61B |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT6... |
| Features |
ERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-c Thermal Resistance,Junction to Ambient
isc website：www.iscsemi.com
MAX UNIT 2.5 ℃/W 62.5 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power...
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| Datasheet |
 BDT61B Datasheet 211.37KB |
