| Part Number | BD900 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation- : PC= 70W... |
| Features |
sistance,Junction to Ambient 62.5 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
BD900
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIO...
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| Datasheet |
 BD900 Datasheet
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