Part Number | BD636 |
Manufacturer | INCHANGE |
Title | Silicon PNP Power Transistor |
Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Complement to Type BD635 ·Minimum Lot... |
Features |
EO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
VBE(on)...
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Datasheet | BD636 Datasheet |