| Part Number | BD633 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Complement to Type BD634 ·Minimum Lot-t... |
| Features |
ctor-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) Base-Emitter...
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| Datasheet |
 BD633 Datasheet 188.66KB |
