| Part Number | BD116 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Excellent Safe Operating Area ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(... |
| Features |
cified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat) Base-Emitter Satu...
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| Datasheet |
 BD116 Datasheet 175.17KB |
