| Part Number | 4N60AS |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device perf... |
| Features |
ource Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS=4A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS...
|
| Datasheet |
 4N60AS Datasheet 222.28KB |
