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3DD200D

INCHANGE
Part Number 3DD200D
Manufacturer INCHANGE
Title NPN Transistor
Description ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 8A ·Minimum Lot-to-L...
Features :www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD200D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sust...

Datasheet PDF File 3DD200D Datasheet 201.39KB

3DD200D   3DD200D   3DD200D  




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