Part Number | 3DD200D |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 8A ·Minimum Lot-to-L... |
Features |
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD200D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sust...
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Datasheet | 3DD200D Datasheet 201.39KB |