| Part Number | 3DD103E |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·DC Current Gain- : hFE= 10(Min.)@IC= 1.5A ·Collector-Emitter Saturation Voltage- : V... |
| Features |
R
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB= 1...
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| Datasheet |
 3DD103E Datasheet
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