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3DD100B

INCHANGE
Part Number 3DD100B
Manufacturer INCHANGE
Title NPN Transistor
Description ·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust...
Features L PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 1mA; IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;...

Datasheet PDF File 3DD100B Datasheet

3DD100B   3DD100B   3DD100B  




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