| Part Number | 3CD9A |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust ... |
| Features |
OL
PARAMETER
CONDITIONS
VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ; IB= 0
VEBO(BR) Emitter-Base Breakdown Voltage
IE=- 10mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= -1.5A
VBE(sat) Base-Emitter Saturatio...
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| Datasheet |
 3CD9A Datasheet 178.85KB |
