| Part Number | 2SD835 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain- : hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 4A ·Minimum Lot-to-Lot variations f... |
| Features |
wer Transistor
2SD835
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CB...
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| Datasheet |
 2SD835 Datasheet
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