Part Number | 2SD812 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB747 ·Minimum... |
Features |
er Saturation Voltage IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
DC Current Gain...
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Datasheet | 2SD812 Datasheet 209.54KB |