Part Number | 2SD799 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min.) ·High DC Current Gain : hFE= 600(Min.) @IC= 2A ·Minimum Lot-to-Lot variations for ro... |
Features |
) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
VECF
C-E Diode Forward Voltage
IF= 4A
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=...
|
Datasheet | 2SD799 Datasheet |