| Part Number | 2SD665 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Complement to Type 2SB645 ·Mi... |
| Features |
rwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitt...
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| Datasheet |
 2SD665 Datasheet 196.66KB |
