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2SD605

INCHANGE
Part Number 2SD605
Manufacturer INCHANGE
Title NPN Transistor
Description ·Low Collector Saturation Voltage ·High DC Current Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re...
Features Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain IC= 4A; IB= 40mA VCB=600V; IE=0 VCE=...

Datasheet PDF File 2SD605 Datasheet 177.21KB

2SD605   2SD605   2SD605  




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