| Part Number | 2SD581 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·Minimum Lot-to... |
| Features |
ge IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
hFE-1
D...
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| Datasheet |
 2SD581 Datasheet
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